IRFB16N60L Datasheet | International Rectifier

Features and Benefits - Super Fast body diode eliminates the need for external diodes in ZVS applications. - Lower Gate charge results in simpler drive requirements. - Enhanced dv/dt capabilities offer improved ruggedness. TO-220AB - Higher Gate voltage threshold offers improved noise immunity . Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM Max. 16 10 60 310 2.5 ±30 11 -55 to + 150 300 (1.6mm from case ) 1.1(10) Units A W W/°C V V/ns °C N- m (lbf- in) c PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and e Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 130 240 450 5.8 16 A 60 1.5 200 360 670 8.7 V Conditions MOSFET symbol showing the integral...