Download IRFB16N60LPBF Datasheet PDF
International Rectifier
IRFB16N60LPBF
IRFB16N60LPBF is SMPS MOSFET manufactured by International Rectifier.
Features and Benefits - Super Fast body diode eliminates the need for external diodes in ZVS applications. - Lower Gate charge results in simpler drive requirements. - Enhanced dv/dt capabilities offer improved ruggedness. - Higher Gate voltage threshold offers improved noise immunity . TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM Max. 16 10 60 310 Units A W W/°C V V/ns °C .. c PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and d 2.5 ±30 10 -55 to + 150 300 (1.6mm from case ) 1.1(10) Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton N- m (lbf- in) Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -...