IRFB16N60LPBF
IRFB16N60LPBF is SMPS MOSFET manufactured by International Rectifier.
Features and Benefits
- Super Fast body diode eliminates the need for external diodes in ZVS applications.
- Lower Gate charge results in simpler drive requirements.
- Enhanced dv/dt capabilities offer improved ruggedness.
- Higher Gate voltage threshold offers improved noise immunity .
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM
Max.
16 10 60 310
Units
A W W/°C V V/ns °C
.. c
PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and d
2.5 ±30 10 -55 to + 150 300 (1.6mm from case ) 1.1(10)
Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Diode Characteristics
Symbol
IS ISM VSD trr Qrr IRRM ton
N- m (lbf- in)
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
Min. Typ. Max. Units
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