IRFBC40AS Description
l Single transistor Forward Notes through are on page 9 .irf. 1 6/29/99 IRFBC40AS Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Drain-to-Source Breakdown Voltage 600 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
IRFBC40AS Key Features
- Uninterruptable Power Supply
- High speed power switching
- VDSS 600V Rds(on) max 1.2 Ω ID 6.2A Benefits
- Low Gate Charge Qg results in Simple Drive Requirement
- Improved Gate, Avalanche and dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Effective Coss Specified ( See AN 1001) D 2 P ak