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PD 91677B
IRG4BC10UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast CoPack IGBT
VCES = 600V VCE(on) typ. = 2.15V
Features
• UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous Generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package
G
@VGE = 15V, IC = 5.0A
E
n-cha nn el
tf (typ.) = 140ns
Benefits
• Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's .
IRG4BC10UD Datasheet
