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IRG4PC30SPBF - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free C G E n-channel VCES = 600V VCE(on) typ. = 1.4V @VGE = 15V, IC = 18A Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified.

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PD - 94922 INSULATED GATE BIPOLAR TRANSISTOR IRG4PC30SPbF Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free C G E n-channel VCES = 600V VCE(on) typ. = 1.
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