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PD - 94924
IRG4PC30WPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
Industry-benchmark switching losses improve efficiency of all power supply topologies
50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability Lead-Free
C
G E
n-channel
Benefits
VCES = 600V VCE(on) max. = 2.
IRG4PC30WPBF Datasheet
