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IRG4RC10U Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 91572A IRG4RC10U INSULATED GATE BIPOLAR TRANSISTOR.

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IRG4RC10U insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4RC10U
Manufacturer	International Rectifier (now Infineon)
File Size	167.67 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Download	IRG4RC10U Download (PDF)

Key Features

UltraFast: Optimized for high operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation.
Industry standard TO-252AA package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 2.15V @VGE = 15V, IC = 5.0A n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified ap.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRG4RC10UD	INSULATED GATE BIPOLAR TRANSISTOR
IRG4RC10UDPBF	UltraFast CoPack IGBT
IRG4RC10UPBF	UltraFast speed IGBT
IRG4RC10K	INSULATED GATE BIPOLAR TRANSISTO
IRG4RC10KD	INSULATED GATE BIPOLAR TRANSISTO
IRG4RC10KDPBF	INSULATED GATE BIPOLAR TRANSISTO
IRG4RC10KPBF	INSULATED GATE BIPOLAR TRANSISTO
IRG4RC10S	INSULATED GATE BIPOLAR TRANSISTOR
IRG4RC10SD	INSULATED GATE BIPOLAR TRANSISTOR
IRG4RC10SDPBF	Standard Speed CoPack IGBT