IRG4RC10U Datasheet PDF (INSULATED GATE BIPOLAR TRANSISTOR) | Download International Rectifier IRG4RC10U

IRG4RC10U - INSULATED GATE BIPOLAR TRANSISTOR

Features

UltraFast: Optimized for high operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation.
Industry standard TO-252AA package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 2.15V @VGE = 15V, IC = 5.0A n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified ap.

Datasheet Details

Part number	IRG4RC10U
Manufacturer	International Rectifier (now Infineon)
File Size	167.67 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4RC10U Datasheet
Additional preview pages of the IRG4RC10U datasheet.

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Full PDF Text Transcription

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PD - 91572A IRG4RC10U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • Industry standard TO-252AA package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 2.15V @VGE = 15V, IC = 5.

Published: Sep 27, 2009 |