IRG4RC10UD Datasheet | International Rectifier

PD 91571A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Ultra Fast Co Pack IGBT VCES = 600V VCE(on) typ. = 2.15V - Ultra Fast: Optimized for medium operating frequencies ( 8-40 k Hz in hard switching, >200 k Hz in resonant mode). - Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation - IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations - Industry standard TO-252AA package - Generation 4 IGBT's offer highest efficiencies available - IGBT's optimized for specific application conditions - HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing - Lower losses than MOSFET's conduction and Diode losses @VGE = 15V, IC = 5.0A E n-cha nn el tf (typ.) = 140ns Benefits D-PAK...