Click to expand full text
PD - 95328
IRG4RC10UDPbF
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
UltraFast CoPack IGBT
C
UltraFast: Optimized for medium operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-252AA package Lead-Free Generation 4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's .
IRG4RC10UDPBF Datasheet
