IRG4RC10UDPBF Datasheet | International Rectifier

- 95328 IRG4RC10UDPb F Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Ultra Fast Co Pack IGBT • Ultra Fast: Optimized for medium operating frequencies ( 8-40 k Hz in hard switching, >200 k Hz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-252AA package • Lead-Free • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Lower losses than MOSFET's conduction and Diode losses VCES = 600V VCE(on) typ. = 2.15V @VGE = 15V, IC = 5.0A n-channel tf (typ.) = 140ns Benefits D-PAK...