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IRG4RC20F Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 91731A IRG4RC20F INSULATED GATE BIPOLAR TRANSISTOR.

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IRG4RC20F insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4RC20F
Manufacturer	International Rectifier (now Infineon)
File Size	295.71 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Download	IRG4RC20F Download (PDF)

Key Features

Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBTs.
Industry standard TO-252AA package.
Combines very low VCE(on) with low switching losses C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.82V @VGE = 15V, IC = 12A N-channel Benefits.
Generation 4 IGBTs offer highest efficie.

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