IRGIB7B60KD Datasheet | International Rectifier

Features - - - - - Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. VCES = 600V IC = 8.0A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel Benefits - Benchmark Efficiency for Motor Control. - Rugged Transient Performance. - Low EMI. - Excellent Current Sharing in Parallel Operation. VCE(on) typ. = 1.8V TO-220AB Full Pak Absolute Maximum Ratings Parameter .. Max. 600 12 8.0 Units VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VISOL VGE PD @ TC = 25°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current c 24 24 9.0 6.0 18 2500 ±20 39 20 -55 to +175 °C 300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1 N- m) W V Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to Case, t=1 min. Gate-to-Emitter Voltage Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw PD @ TC = 100°C Maximum Power Dissipation Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. - - - - - - - - - - - - - - - Typ. - - - - - -...