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IRGMVC50U - INSULATED GATE BIPOLAR TRANSISTOR

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

  • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Ultra Fast operation > 10 kHz Switching-loss rating includes all "tail" losses Ceramic Eyelets C Ultra Fast Speed IGBT VCES = 600V G E VCE(on) max = 3.0V @VGE = 15V, IC = 27A.

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Datasheet Details

Part number IRGMVC50U
Manufacturer International Rectifier
File Size 576.31 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRGMVC50U Datasheet
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www.DataSheet4U.com PD -90825A IRGMVC50U INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE Features • • • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Ultra Fast operation > 10 kHz Switching-loss rating includes all "tail" losses Ceramic Eyelets C Ultra Fast Speed IGBT VCES = 600V G E VCE(on) max = 3.0V @VGE = 15V, IC = 27A Description n-ch an nel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.
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