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IRGP4068D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRGP4068D-EPbF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRGP4068D-EPbF

Datasheet Details

Part number	IRGP4068D-EPbF
Manufacturer	International Rectifier
File Size	258.37 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4068D-EPbF Datasheet
Additional preview pages of the IRGP4068D-EPbF datasheet.

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Features

Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra-low VF Hyperfast Diode Tight parameter distribution Lead Free Package C VCES = 600V IC = 48A, TC = 100°C G E tSC ≥ 5µs, TJ(max) = 175°C n-channel C VCE(on) typ. = 1.

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Published: Mar 16, 2007 |