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IRGP4078D-EPBF Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

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IRGP4078D-EPBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGP4078D-EPBF
Manufacturer	International Rectifier (now Infineon)
File Size	839.12 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4078D-EPBF Datasheet

Overview

IRGP4078DPbF IRGP4078D-EP C VCES = 600V INOMINAL = 50A G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING.

Key Features

Low VCE (ON) Trench IGBT Technology.
Low Switching Losses.
Maximum Junction temperature 175°C.
5 µs short circuit SOA.
Square RBSOA.
100% of the parts tested for ILM.
Positive VCE (ON) Temperature co-efficient.
Ultra-low VF Hyperfast Diode.
Tight parameter distribution Benefits.
Device optimized for induction heating and soft switching.

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