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IRGP4078D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

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IRGP4078D-EPBF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRGP4078D-EPBF

Datasheet Details

Part number	IRGP4078D-EPBF
Manufacturer	International Rectifier
File Size	839.12 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4078D-EPBF Datasheet
Additional preview pages of the IRGP4078D-EPBF datasheet.

IRGP4078D-EPBF Product details

Features

Low VCE (ON) Trench IGBT Technology.
Low Switching Losses.
Maximum Junction temperature 175°C.
5 µs short circuit SOA.
Square RBSOA.
100% of the parts tested for ILM.
Positive VCE (ON) Temperature co-efficient.
Ultra-low VF Hyperfast Diode.
Tight parameter distribution Benefits.
Device optimized for induction heating and soft switching.

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Published: Mar 31, 2014 |