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IRGP4078DPBF Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

Download the IRGP4078DPBF datasheet PDF. This datasheet also includes the IRGP4078D-EPBF variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IRGP4078D-EPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Overview

  IRGP4078DPbF IRGP4078D-EP  C   VCES = 600V INOMINAL = 50A G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING.

Key Features

  • Low VCE (ON) Trench IGBT Technology.
  • Low Switching Losses.
  • Maximum Junction temperature 175°C.
  • 5 µs short circuit SOA.
  • Square RBSOA.
  • 100% of the parts tested for ILM.
  • Positive VCE (ON) Temperature co-efficient.
  • Ultra-low VF Hyperfast Diode.
  • Tight parameter distribution Benefits.
  • Device optimized for induction heating and soft switching.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
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