Download IRGPS66160DPBF Datasheet PDF
IRGPS66160DPBF page 2
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IRGPS66160DPBF Description

IRGPS66160DPbF VCES = 600V IC = 160A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 120A Applications  Welding  H Bridge Converters Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C G E n-channel G Gate IRGPS66160DPbF Super 247 C Collector E Emitter.