IRGPS66160DPBF Overview
IRGPS66160DPbF VCES = 600V IC = 160A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 120A Applications Welding H Bridge Converters Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C G E n-channel G Gate IRGPS66160DPbF Super 247 C Collector E Emitter.