IRHMS63164 Datasheet | International Rectifier

.. PD-96958 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level RDS(on) ID IRHMS67164 100K Rads (Si) 0.019Ω 45A- IRHMS63164 300K Rads (Si) 0.019Ω 45A- IRHMS67164 150V, N-CHANNEL TECHNOLOGY International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90Me V/(mg/cm2). Their bination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters. Low-Ohmic TO-254AA Features : n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light...