Datasheet4U Logo Datasheet4U.com

IRHMS63164 - (IRHMS67164 / IRHMS63164) RADIATION HARDENED POWER MOSFET THRU-HOLE

This page provides the datasheet information for the IRHMS63164, a member of the IRHMS67164 (IRHMS67164 / IRHMS63164) RADIATION HARDENED POWER MOSFET THRU-HOLE family.

Datasheet Summary

Features

  • n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Volt.

📥 Download Datasheet

Datasheet preview – IRHMS63164

Datasheet Details

Part number IRHMS63164
Manufacturer International Rectifier
File Size 320.94 KB
Description (IRHMS67164 / IRHMS63164) RADIATION HARDENED POWER MOSFET THRU-HOLE
Datasheet download datasheet IRHMS63164 Datasheet
Additional preview pages of the IRHMS63164 datasheet.

📁 Similar Datasheet

  • IRHMS593160 - RADIATION HARDENED POWER MOSFET (IRF)
  • IRHMS593260 - RADIATION HARDENED POWER MOSFET (IRF)
  • IRHMS597160 - RADIATION HARDENED POWER MOSFET (IRF)
  • IRHMS597260 - RADIATION HARDENED POWER MOSFET (IRF)
  • IRHM2C50SE - N-Channel Transistor (IRF)
  • IRHM53260 - (IRHM5x260) RADIATION HARDENED POWER MOSFET THRU-HOLE (IRF)
  • IRHM54260 - (IRHM5x260) RADIATION HARDENED POWER MOSFET THRU-HOLE (IRF)
  • IRHM57260 - Power MOSFET (IRF)
  • IRHM57260SE - Power MOSFET (IRF)
  • IRHM58260 - (IRHM5x260) RADIATION HARDENED POWER MOSFET THRU-HOLE (IRF)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com PD-96958 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level RDS(on) ID IRHMS67164 100K Rads (Si) 0.019Ω 45A* IRHMS63164 300K Rads (Si) 0.019Ω 45A* IRHMS67164 150V, N-CHANNEL TECHNOLOGY International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers.
Published: |