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IRHMS63260 - POWER MOSFET

This page provides the datasheet information for the IRHMS63260, a member of the IRHMS67260 POWER MOSFET family.

Datasheet Summary

Features

  • n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Volt.

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www.DataSheet4U.com PD - 94667A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) IRHMS63260 IRHMS64260 300K Rads (Si) 600K Rads (Si) RDS(on) 0.029Ω 0.029Ω 0.029Ω ID 45A* 45A* 45A* 45A* IRHMS67260 200V, N-CHANNEL TECHNOLOGY IRHMS68260 1000K Rads (Si) 0.029Ω International Rectifier’s R6 TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2).
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