IRHMS67260 Datasheet | International Rectifier

IRHMS67260 (JANSR2N7584T1) PD-94667J Radiation Hardened Power MOSFET Thru-Hole (Low Ohmic TO-254AA) 200V, 45A, N-channel, R6 Technology Features - Single event effect (SEE) hardened (up to LET of 90 Me V- cm2/mg) - Low RDS(on) - Fast switching - Low total gate charge - Simple drive requirements - Hermetically sealed - Electrically isolated - Ceramic eyelets - Light weight - ESD rating: Class 3A per MIL-STD-750, Method 1020 Potential Applications - DC-DC converter - Motor drives - Electric propulsion Product Summary - BVDSS: 200V - ID : 45A - RDS(on),max : 29m - QGmax : 240n C - REF: MIL-PRF-19500/753 Low Ohmic TO-254AA Product Validation Qualified to JANS screening flow according to MIL-PRF-19500 for space applications Description IR Hi Rel IR Hi Rel R6 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90 Me V- cm2/mg. The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers. These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters. Ordering...