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IRHMS67264 - RADIATION HARDENED POWER MOSFET

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Features

  • n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Volt.

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www.DataSheet.co.kr PD-96991 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level RDS(on) IRHMS67264 100K Rads (Si) 0.041Ω IRHMS63264 300K Rads (Si) 0.041Ω ID 45A 45A IRHMS67264 250V, N-CHANNEL TECHNOLOGY International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers.
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