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IRHMS68260 Datasheet (IRHMS6x260) RADIATION HARDENED POWER MOSFET THRU-HOLE

Manufacturer: International Rectifier (now Infineon)

Download the IRHMS68260 datasheet PDF. This datasheet also includes the IRHMS67260 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IRHMS67260_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Overview

www.DataSheet4U.com PD - 94667A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) IRHMS63260 IRHMS64260 300K Rads (Si) 600K Rads (Si) RDS(on) 0.029Ω 0.029Ω 0.029Ω ID 45A* 45A* 45A* 45A* IRHMS67260 200V, N-CHANNEL TECHNOLOGY IRHMS68260 1000K Rads (Si) 0.029Ω International Rectifier’s R6 TM technology provides superior power MOSFETs for space applications.

These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2).

Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers.

Key Features

  • n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Volt.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
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IRHMS64260 (IRHMS6x260) RADIATION HARDENED POWER MOSFET THRU-HOLE
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