| Part number | IRHN9250 |
|---|---|
| Datasheet | IRHN9250_InternationalRectifier.pdf |
| File Size | 273.98 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | RADIATION HARDENED POWER MOSFET |
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MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY QPL Part Number JANSR2N7423U JANSF2N7423U ™ ® International Rectifier’s RADHard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRHN9230 | P-CHANNEL TRANSISTOR |
| IRHN9130 | P-CHANNEL TRANSISTOR |
| IRHN9150 | P-CHANNEL TRANSISTOR |
| IRHN2C50SE | N-Channel Transistor |
| IRHN3150 | Radiation Hardened Power MOSFET |
| IRHN4150 | RADIATION HARDENED POWER MOSFET |
| IRHN7130 | Radiation Hardened Power MOSFET |
| IRHN7150 | Radiation Hardened Power MOSFET |
| IRHN7230 | N-Channel Transistor |
| IRHN7250 | Radiation Hardened Power MOSFET |
