This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRHNA8160 |
|---|---|
| Datasheet | IRHNA8160 IRHNA7160 Datasheet (PDF) |
| File Size | 242.20 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | N-CHANNEL TRANSISTOR |
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Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1396 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR ® IRHNA7160 IRHNA8160 N-CHANNEL MEGA RAD HARD 100 Volt, 0.045 Ω, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD...
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRHNA8064 | N-CHANNEL TRANSISTOR |
| IRHNA8260 | N-CHANNEL TRANSISTOR |
| IRHNA53064 | RADIATION HARDENED POWER MOSFET |
| IRHNA53160 | RADIATION HARDENED POWER MOSFET |
| IRHNA53260 | N-CHANNEL POWER MOSFET |
| IRHNA53Z60 | RADIATION HARDENED POWER MOSFET |
| IRHNA54064 | RADIATION HARDENED POWER MOSFET |
| IRHNA54160 | RADIATION HARDENED POWER MOSFET |
| IRHNA54260 | N-CHANNEL POWER MOSFET |
| IRHNA54Z60 | RADIATION HARDENED POWER MOSFET |
