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IRHNA8260 - N-CHANNEL TRANSISTOR

This page provides the datasheet information for the IRHNA8260, a member of the IRHNA7260 N-CHANNEL TRANSISTOR family.

Features

  • n n n n n n n n n n n n n Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Lightweight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC =.

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Full PDF Text Transcription

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www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1397 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHNA7260 IRHNA8260 N-CHANNEL MEGA RAD HARD 200 Volt, 0.070Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds.
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