IRHNKC67C30 Datasheet Radiation Hardened Power MOSFET

Manufacturer: International Rectifier (now Infineon)

IRHNKC67C30 radiation hardened power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRHNKC67C30
Manufacturer	International Rectifier (now Infineon)
File Size	695.89 KB
Description	Radiation Hardened Power MOSFET
Download	IRHNKC67C30 Download (PDF)

General Description

IR HiRel R6 technology provides superior power MOSFETs for space applications.

These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 83.6MeV·cm2/mg.

Their combination of low RDS(on) and faster switching times reduces the power losses and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers.

Overview

IRHNKC67C30 (JANSR2N7598U3CE) Radiation Hardened Power MOSFET Surface Mount (SMD-0.5e Ceramic Lid) 600V, 3.

Key Features

Low RDS(on).
Fast switching.
Single event effect (SEE) hardened.
Low total gate charge.
Simple drive requirements.
Hermetically sealed.
Enhanced ceramic package for direct to pcb mounting.
Light weight.
Surface mount with low CTE mismatch to PCB.
ESD rating: class 2 per MIL-STD-750, Method 1020 Product Summary.
BVDSS: 600V.
ID : 3.4A.
RDS(on), max : 3.1.
QG, max: 52nC.

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