IRHNKC9A7034 Datasheet Radiation Hardened Power MOSFET

Manufacturer: International Rectifier (now Infineon)

IRHNKC9A7034 radiation hardened power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRHNKC9A7034
Manufacturer	International Rectifier (now Infineon)
File Size	896.14 KB
Description	Radiation Hardened Power MOSFET
Datasheet	IRHNKC9A7034 Datasheet

General Description

IR HiRel R9 technology provides superior power MOSFETs for space applications.

These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 88.6 MeV·cm2/mg.

Their combination of low RDS(on) and faster switching times reduces the power losses and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers.

Overview

IRHNKC9A7034 (JANSR2N7647U3CE) Radiation Hardened Power MOSFET Surface Mount (SMD-0.

Key Features

Low RDS(on).
Fast switching.
Single event effect (SEE) hardened.
Low total gate charge.
Simple drive requirements.
Hermetically sealed.
Ceramic package.
Light weight.
Surface mount.
ESD rating: class 2 per MIL-STD-750, Method 1020 Product Summary.
BVDSS: 60V.
ID : 40A.
RDS(on), max : 18m.
QG, max: 45nC.
REF: MIL-PRF-19500/775 Potential.

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