Datasheet4U Logo Datasheet4U.com
International Rectifier (now Infineon) logo

IRHNS67260

Manufacturer: International Rectifier (now Infineon)

IRHNS67260 datasheet by International Rectifier (now Infineon).

IRHNS67260 datasheet preview

IRHNS67260 Datasheet Details

Part number IRHNS67260
Datasheet IRHNS67260-InternationalRectifier.pdf
File Size 1.42 MB
Manufacturer International Rectifier (now Infineon)
Description Radiation Hardened Power MOSFET
IRHNS67260 page 2 IRHNS67260 page 3

IRHNS67260 Overview

IR HiRel R6 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90 MeV·cm2/mg. The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers.

IRHNS67260 Key Features

  • Single event effect (SEE) hardened (up to LET of 90 MeV-cm2/mg)
  • Low RDS(on)
  • Low total gate charge
  • Simple drive requirements
  • Hermetically sealed
  • Ceramic package
  • Light weight
  • Surface mount
  • ESD rating: Class 3A per MIL-STD-750, Method 1020
  • BVDSS: 200V
International Rectifier (now Infineon) logo - Manufacturer

More Datasheets from International Rectifier (now Infineon)

View all International Rectifier (now Infineon) datasheets

Part Number Description
IRHNS9A97260 Radiation Hardened Power MOSFET
IRHN2C50SE N-Channel Transistor
IRHN3150 Radiation Hardened Power MOSFET
IRHN4150 RADIATION HARDENED POWER MOSFET
IRHN7130 Radiation Hardened Power MOSFET
IRHN7150 Radiation Hardened Power MOSFET
IRHN7230 N-Channel Transistor
IRHN7250 Radiation Hardened Power MOSFET
IRHN7250SE Radiation Hardened Power MOSFET
IRHN7450 (IRHN7450 / IRHN8450) HEXFET TRANSISTOR

IRHNS67260 Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts