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IRHNS9A97260 Datasheet Radiation Hardened Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: IRHNS9A97260 (JANSR2N7666U2A) Radiation Hardened Power MOSFET Surface-Mount (SupIR-SMD™) -200V, -62A, P-channel, R9 Superjunction Technology.

General Description

IR HiRel R9 technology provides superior power MOSFETs for space applications.

This family of p-channel MOSFETs are the first radiation hardened devices that are based on a superjunction technology.

These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90.5 MeV·cm2/mg.

Key Features

  • Single event effect (SEE) hardened (up to LET of 90.5 MeV.
  • cm2/mg).
  • Low RDS(on).
  • Improved SOA for linear mode operation.
  • Fast switching.
  • Low total gate charge.
  • Simple drive requirements.
  • Hermetically sealed.
  • Electrically isolated.
  • Light weight.
  • ESD rating: Class 3B per MIL-STD-750, Method 1020 Potential.

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