IRHNS9A97260 Description
IR HiRel R9 technology provides superior power MOSFETs for space applications. This family of p-channel MOSFETs are the first radiation hardened devices that are based on a superjunction technology. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90.5 MeV·cm2/mg.
IRHNS9A97260 Key Features
- Single event effect (SEE) hardened (up to LET of 90.5 MeV-cm2/mg)
- Low RDS(on)
- Improved SOA for linear mode operation
- Fast switching
- Low total gate charge
- Simple drive requirements
- Hermetically sealed
- Electrically isolated
- Light weight
- ESD rating: Class 3B per MIL-STD-750, Method 1020