IRLMS1503 Datasheet | International Rectifier

- 91508D HEXFET® Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low RDS(on) N-Channel MOSFET VDSS = 30V RDS(on) = 0.10Ω Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET® power MOSFET...