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IRLMS1902 Datasheet HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

General Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The Micro6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23.

Overview

PD - 91540C IRLMS1902 HEXFET® Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low RDS(on) N-Channel MOSFET D D G 1 6 A D D S VDSS = 20V RDS(on) = 0.