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PD - 95762
IRLMS1503PbF
HEXFET® Power MOSFET
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Generation V Technology Micro6 Package Style Ultra Low RDS(on) N-Channel MOSFET Lead-Free
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6
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VDSS = 30V RDS(on) = 0.10Ω
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5
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Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6™ package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23.
IRLMS1503PBF Datasheet
