IRLMS6802 - HEXFET Power MOSFET

Description

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

International Rectifier

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Datasheet Details

Part number	IRLMS6802
Manufacturer	International Rectifier
File Size	93.70 KB
Description	HEXFET Power MOSFET
Datasheet	IRLMS6802 Datasheet
Additional preview pages of the IRLMS6802 datasheet.

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Full PDF Text Transcription

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PD- 91848E IRLMS6802 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D 1 6 A D VDSS = -20V D 2 5 D G 3 4 S RDS(on) = 0.050Ω Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium.

Published: Oct 19, 2005 |