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JANSR2N7390 - RADIATION HARDENED POWER MOSFET

Key Features

  • n Single.

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📁 Similar Datasheet

Part Number Description Manufacturer
JANSR2N7395 8A/ 100V/ 0.230 Ohm/ Rad Hard/ N-Channel Power MOSFET Intersil Corporation
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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
JANSR2N7390U RADIATION HARDENED POWER MOSFET
JANSR2N7391 N-CHANNEL MOSFET
JANSR2N7392 Radiation Hardened Power MOSFET
JANSR2N7381 Radiation Hardened Power MOSFET
JANSR2N7389 Radiation Hardened Power MOSFET

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PD - 91312E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) IRHF9230 JANSR2N7390 200V, P-CHANNEL REF: MIL-PRF-19500/630 RAD-Hard™HEXFET® TECHNOLOGY Product Summary Part Number Radiation Level IRHF9230 100K Rads (Si) IRHF93230 300K Rads (Si) RDS(on) 0.80Ω 0.80Ω ID QPL Part Number -4.0A JANSR2N7390 -4.0A JANSF2N7390 International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.