JANSR2N7390 Datasheet | International Rectifier

- 91312E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) IRHF9230 JANSR2N7390 200V, P-CHANNEL REF: MIL-PRF-19500/630 RAD-Hard™HEXFET® TECHNOLOGY Product Summary Part Number Radiation Level IRHF9230 100K Rads (Si) IRHF93230 300K Rads (Si) RDS(on) 0.80Ω 0.80Ω ID QPL Part Number -4.0A JANSR2N7390 -4.0A JANSF2N7390 International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The bination of low Rds(on) and low gate charge reduces the...