Overview: PD - 91312E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) IRHF9230 JANSR2N7390 200V, P-CHANNEL REF: MIL-PRF-19500/630
RAD-Hard™HEXFET® TECHNOLOGY Product Summary Part Number Radiation Level IRHF9230 100K Rads (Si) IRHF93230 300K Rads (Si) RDS(on) 0.80Ω 0.80Ω ID QPL Part Number -4.0A JANSR2N7390 -4.0A JANSF2N7390 International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
