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JANSR2N7391 - N-CHANNEL MOSFET

Key Features

  • n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Light Weight n ESD Rating: Class 3B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Pre-Irradiation Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current À PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor 2.

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📁 Similar Datasheet

Part Number Description Manufacturer
JANSR2N7395 8A/ 100V/ 0.230 Ohm/ Rad Hard/ N-Channel Power MOSFET Intersil Corporation
JANSR2N7396 5A/ 200V/ 0.460 Ohm/ Rad Hard/ N-Channel Power MOSFET Intersil Corporation
JANSR2N7397 4A/ 250V/ 0.610 Ohm/ Rad Hard/ N-Channel Power MOSFET Intersil Corporation
JANSR2N7398 2A/ 500V/ 2.50 Ohm/ Rad Hard/ N-Channel Power MOSFET Intersil Corporation
JANSR2N7399 11A/ 100V/ 0.210 Ohm/ Rad Hard/ N-Channel Power MOSFET Intersil Corporation

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
JANSR2N7390 RADIATION HARDENED POWER MOSFET
JANSR2N7390U RADIATION HARDENED POWER MOSFET
JANSR2N7392 Radiation Hardened Power MOSFET
JANSR2N7381 Radiation Hardened Power MOSFET
JANSR2N7389 Radiation Hardened Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) PD-91224E IRHM7360SE JANSR2N7391 400V, N-CHANNEL REF:MIL-PRF-19500/661 RAD Hard™ HEXFET® TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM7360SE 100K Rads (Si) 0.20Ω ID QPL Part Number 22A JANSR2N7391 International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.