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JANSR2N7390U - RADIATION HARDENED POWER MOSFET

General Description

IR HiRel RAD-Hard HEXFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Key Features

  • Single Event E.

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📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
JANSR2N7390 RADIATION HARDENED POWER MOSFET
JANSR2N7391 N-CHANNEL MOSFET
JANSR2N7392 Radiation Hardened Power MOSFET
JANSR2N7381 Radiation Hardened Power MOSFET
JANSR2N7389 Radiation Hardened Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD-91804F IRHE9230 JANSR2N7390U RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) 200V, P-CHANNEL REF: MIL-PRF-19500/630 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHE9230 100 kRads(Si) IRHE93230 300 kRads(Si) RDS(on) 0.80 0.80 ID -4.0A -4.0A QPL Part Number JANSR2N7390U JANSF2N7390U LCC-18 Description IR HiRel RAD-Hard HEXFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.