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JANSR2N7392 Datasheet Radiation Hardened Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: IRHM7460SE (JANSR2N7392) Radiation Hardened Power MOSFET Thru-Hole (TO-254AA Low Ohmic) 500V, 18A, N-channel, Rad Hard HEXFET™ Technology.

General Description

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Key Features

  • Single event effect (SEE) hardened.
  • Ultra Low RDS(on).
  • Low total gate charge.
  • Simple drive requirements.
  • Hermetically sealed.
  • Electrically isolated.
  • Ceramic eyelets.
  • Light weight.
  • ESD rating: Class 3B per MIL-STD-750, Method 1020 Product Summary.
  • BVDSS: 500V.
  • ID : 18A.
  • RDS(on),max : 32m.
  • QG, max : 180nC.
  • REF: MIL-PRF-19500/661 Potential.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
JANSR2N7390 RADIATION HARDENED POWER MOSFET
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JANSR2N7381 Radiation Hardened Power MOSFET
JANSR2N7389 Radiation Hardened Power MOSFET
JANSR2N7261 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
JANSR2N7262 Radiation Hardened Power MOSFET
JANSR2N7268U Radiation Hardened Power MOSFET
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JANSR2N7425 POWER MOSFET

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