Datasheet4U Logo Datasheet4U.com

JANSR2N7392 - Radiation Hardened Power MOSFET

General Description

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Key Features

  • Single event effect (SEE) hardened.
  • Ultra Low RDS(on).
  • Low total gate charge.
  • Simple drive requirements.
  • Hermetically sealed.
  • Electrically isolated.
  • Ceramic eyelets.
  • Light weight.
  • ESD rating: Class 3B per MIL-STD-750, Method 1020 Product Summary.
  • BVDSS: 500V.
  • ID : 18A.
  • RDS(on),max : 32m.
  • QG, max : 180nC.
  • REF: MIL-PRF-19500/661 Potential.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRHM7460SE (JANSR2N7392) Radiation Hardened Power MOSFET Thru-Hole (TO-254AA Low Ohmic) 500V, 18A, N-channel, Rad Hard HEXFET™ Technology PD-91394G Features • Single event effect (SEE) hardened • Ultra Low RDS(on) • Low total gate charge • Simple drive requirements • Hermetically sealed • Electrically isolated • Ceramic eyelets • Light weight • ESD rating: Class 3B per MIL-STD-750, Method 1020 Product Summary • BVDSS: 500V • ID : 18A • RDS(on),max : 32m • QG, max : 180nC • REF: MIL-PRF-19500/661 Potential Applications • DC-DC converter • Motor drives Product Validation TO-254AA Low Ohmic Qualified to JANS screening flow according to MIL-PRF-19500 for space applications Description IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.