IRF8308MTRPbF Description
The IRF8308MPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest onstate resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when...
IRF8308MTRPbF Key Features
- RoHs pliant Containing No Lead and Bromide Typical values (unless otherwise specified)
- Low Profile (<0.7 mm)
- Dual Sided Cooling patible
- Ultra Low Package Inductance
- Optimized for High Frequency Switching VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V
- Optimized for Sync. FET socket of Sync. Buck Converter
- Low Conduction and Switching Losses
- patible with existing Surface Mount Techniques