IRFBC40APBF Description
l Single Transistor Forward Notes through are on page 8 .irf. 1 2/5/04 IRFBC40APbF V(BR)DSS Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Drain-to-Source Breakdown Voltage 600 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
IRFBC40APBF Key Features
- Switch Mode Power Supply ( SMPS )
- Uninterruptable Power Supply
- High speed power switching
- Lead-Free Benefits
- Low Gate Charge Qg results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Effective Coss Specified ( See AN 1001) VDSS 600V Rds(on) max 1.2Ω ID 6.2A TO-220AB G DS