IRGP4062-EPBF Description
INSULATED GATE BIPOLAR TRANSISTOR.
IRGP4062-EPBF Key Features
- Low VCE (ON) Trench IGBT Technology
- Low switching losses
- Maximum Junction temperature 175 °C
- 5 μS short circuit SOA
- Square RBSOA
- 100% of the parts tested for ILM
- Positive VCE (ON) Temperature co-efficient
- Tight parameter distribution
- Lead Free Package
IRGP4062-EPBF Applications
- Suitable for a wide range of switching frequencies due to
- Rugged transient Performance for increased reliability
- Excellent Current sharing in parallel operation