IRGP4078D-EPBF Description
IRGP4078DPbF IRGP4078D-EP C VCES = 600V INOMINAL = 50A G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS.
IRGP4078D-EPBF Key Features
- Low VCE (ON) Trench IGBT Technology
- Low Switching Losses
- Maximum Junction temperature 175°C
- 5 µs short circuit SOA
- Square RBSOA
- 100% of the parts tested for ILM
- Positive VCE (ON) Temperature co-efficient
- Ultra-low VF Hyperfast Diode
- Tight parameter distribution Benefits
- Device optimized for induction heating and soft switching