Datasheet4U Logo Datasheet4U.com

HCTS14MS - Radiation Hardened HEX Inverting Schmitt Trigger

General Description

The Intersil HCTS14MS is a Radiation Hardened HEX Inverting Schmitt trigger.

A high on any input forces the output to a Low state.

The HCTS14MS utilizes advanced CMOS/SOS technology to achieve high-speed operation.

Key Features

  • 3 Micron Radiation Hardened SOS CMOS.
  • Total Dose 200K RAD (Si).
  • SEP Effective LET No Upsets: >100 MEV-cm2/mg.
  • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ).
  • Dose Rate Survivability: >1 x 1012 RAD (Si)/s.
  • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse.
  • Cosmic Ray Upset Rate 2 x 10 Errors/Bit Day.
  • Latch-Up Free Under Any Conditions.
  • Military Temperature Range: -55oC to +125oC.
  • Significant Pow.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HCTS164MS 8-Bit Serial-In/Parallel-Out Shift Register Intersil
HCTS191MS Synchronous 4-Bit Up/Down Counter Intersil
HCTS20MS Radiation Hardened Dual 4-Input NAND Gate Intersil
HCTSM80101AAL High Clearance and Creepage Distance Transformers BOURNS
HCTSM80102AAL High Clearance and Creepage Distance Transformers BOURNS

Other Datasheets by Intersil (now Renesas)

Part Number Description
HCTS147MS Radiation Hardened 10-to-4 Line Priority Encoder
HCTS109MS Radiation Hardened Dual JK Flip Flop
HCTS109T Radiation Hardened Dual JK Flip Flop
HCTS10MS Radiation Hardened Triple 3-Input NAND Gate
HCTS112MS Radiation Hardened Dual JK Flip-Flop

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HCTS14MS August 1995 Radiation Hardened HEX Inverting Schmitt Trigger Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14 TOP VIEW A1 1 Y1 2 A2 3 Y2 4 A3 5 Y3 6 GND 7 14 VCC 13 A6 12 Y6 11 A5 10 Y5 9 A4 8 Y4 Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Cosmic Ray Upset Rate 2 x 10 Errors/Bit Day • Latch-Up Free Under Any Conditions • Military Temperature Range: -55oC to +125oC • Significant Power Reduction Compared to LSTTL ICs • DC Operating Voltage Range: 4.5V to 5.5V • LSTTL Input Compatibility - VIL = 0.