RFD16N02LSM
Description
The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.
Key Features
- 16A, 20V
- rDS(ON) = 0.022Ω
- Temperature Compensating PSPICE Model
- Can be Driven Directly from CMOS, NMOS, and TTL Circuits
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- 175oC Operating Temperature
