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RFD16N02LSM - N-Channel Power MOSFET

General Description

The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.

Key Features

  • 16A, 20V.
  • rDS(ON) = 0.022Ω.
  • Temperature Compensating PSPICE Model.
  • Can be Driven Directly from CMOS, NMOS, and TTL Circuits.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature Ordering Information PART NUMBER RFD16N02L RFD16N02LSM.

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Other Datasheets by Intersil (now Renesas)

Part Number Description
RFD16N02L N-Channel Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFD16N02L, RFD16N02LSM May 1997 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET Description The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Features • 16A, 20V • rDS(ON) = 0.