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RFD16N02L - N-Channel Power MOSFET

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General Description

The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.

Overview

RFD16N02L, RFD16N02LSM May 1997 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power.

Key Features

  • 16A, 20V.
  • rDS(ON) = 0.022Ω.
  • Temperature Compensating PSPICE Model.
  • Can be Driven Directly from CMOS, NMOS, and TTL Circuits.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature Ordering Information PART NUMBER RFD16N02L RFD16N02LSM.

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