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RFM12N10 - N-Channel Power MOSFET

Key Features

  • 12A, 80V and 100V.
  • rDS(ON) = 0.200Ω.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (TAB) 1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFM12N08, RFM12N10, RFP12N08, RFP12N10 Semiconductor Data Sheet October 1998 File Number 1386.2 [ /Title (RFM12 These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such N08, RFM12 as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching N10, transistors requiring high speed and low gate drive power. RFP12 These types can be operated directly from integrated N08, circuits. RFP12 Formerly developmental type TA09594. N10) /SubOrdering Information ject PART NUMBER PACKAGE BRAND (12A, 80V and RFM12N08 TO-204AA RFM12N08 100V, RFM12N10 TO-204AA RFM12N10 0.2 RFP12N08 TO-220AB RFP12N08 Ohm, N-Chan- RFP12N10 TO-220AB RFP12N10 nel NOTE: When ordering, use the entire part number.