Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
Features
- 12A, 180V and 200V.
- rDS(ON) = 0.250Ω.
- Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
[ /Title (RFM12 N18, RFM12 N20, RFP12N 18, RFP12N 20) /Subject (12A, 180V and 200V, 0.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN
Ordering Information
PART NUMBER RFM12N18 RFM12N20 RFP12N18 RFP12N20.
RFM12N20 Datasheet
