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RFM12N18 - N-Channel Power MOSFET

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Key Features

  • 12A, 180V and 200V.
  • rDS(ON) = 0.250Ω.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFM12 N18, RFM12 N20, RFP12N 18, RFP12N 20) /Subject (12A, 180V and 200V, 0.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN Ordering Information PART NUMBER RFM12N18 RFM12N20 RFP12N18 RFP12N20.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor RFM12N18, RFM12N20, RFP12N18, RFP12N20 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09293. BRAND RFM12N18 RFM12N20 RFP12N18 RFP12N20 G September 1998 Features • 12A, 180V and 200V • rDS(ON) = 0.