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RFP18N10 - 18A/ 80V and 100V/ 0.100 Ohm/ N-Channel Power MOSFETs

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Key Features

  • 18A, 80V and 100V.
  • rDS(ON) = 0.100Ω.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFM18N08 RFM18N10 RFP18N08 RFP18N10.

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Full PDF Text Transcription for RFP18N10 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RFP18N10. For precise diagrams, and layout, please refer to the original PDF.

Semiconductor RFM18N08, RFM18N10, RFP18N08, RFP18N10 18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate p...

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OSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17421. BRAND RFM18N08 RFM18N10 RFP18N08 RFP18N10 G September 1998 [ /Title (RFM18 N08, RFM18 N10, RFP18N 08, RFP18N 10) /Subject (18A, 80V and 100V, 0.

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