RFP2N20 Overview
RFP2N20 Data Sheet July 1999 File Number 2881.2 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly...
RFP2N20 Key Features
- 2A, 200V
- rDS(ON) = 3.500Ω