RFP2N10 - N-Channel Power MOSFET

Product Overview

Intersil Corporation

Datasheet Details

Part number	RFP2N10
Manufacturer	Intersil Corporation
File Size	46.74 KB
Description	N-Channel Power MOSFET
Datasheet	RFP2N10 Datasheet
Additional preview pages of the RFP2N10 datasheet.

Product details

Description

These are N-channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters.

Features

2A, 80V and 100V.
rDS(ON) 1.05Ω.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Majority Carrier Device.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information G PART NUMBER RFP2N08 RFP2N10.

📁 Similar Datasheet

RFP22N10 - 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs (Fairchild Semiconductor)
RFP25N05 - N-Channel MOSFET (INCHANGE)
RFP25N06 - N-Channel Power MOSFET (Fairchild Semiconductor)
RFP-10-100RV - Flanged Resistors (Anaren Microwave)
RFP-10-50TV - Flanged Terminations (Anaren Microwave)
RFP-10-50TVC - Flanged Terminations (Anaren Microwave)
RFP-10-50TVR - Flanged Terminations (Anaren Microwave)
RFP-100-100RW - Flanged Resistors (Anaren Microwave)

Other Datasheets by Intersil Corporation

RFP2N10L - N-Channel Power MOSFET
RFP2N12 - N-Channel Power MOSFET
RFP2N12L - N-Channel Power MOSFET
RFP2N15 - N-Channel Power MOSFET
RFP2N08 - N-Channel Power MOSFET
RFP2N08L - N-Channel Power MOSFET

Published: Apr 16, 2005 |