RFP2N10
Description
These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters.
Key Features
- 2A, 80V and 100V
- rDS(ON) 1.05Ω
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
