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RFP2N10 - N-Channel Power MOSFET

General Description

These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters.

motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Key Features

  • 2A, 80V and 100V.
  • rDS(ON) 1.05Ω.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information G PART NUMBER RFP2N08 RFP2N10.

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Full PDF Text Transcription (Reference)

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Semiconductor RFP2N08, RFP2N10 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs Description These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09282. July 1998 Features • 2A, 80V and 100V • rDS(ON) 1.