Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
Features
- 2A, 120V and 150V.
- rDS(ON) = 1.750Ω.
- Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
[ /Title (RFP2N 12, RFP2N1 5) /Subject (2A, 120V and 150V, 1.75 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO220AB) /Creator () /DOCIN FO pdfmark
Ordering Information
PART NUMBER RFP2N12 RFP2N15.
RFP2N15 Datasheet
